电子束曝光中的邻近效应修正技术  

Proximity Effect Correction Technique in EB Exposure

作　　者：刘明[1] 陈宝钦[1] 张建宏[1] 李友[1] 

机构地区：[1]中国科学院微电子中心光掩模实验室,北京100029

出　　处：《微细加工技术》2000年第1期16-20,共5页Microfabrication Technology

摘　　要：邻近效应是指电子在抗蚀剂和基片中的散射引起图形的改变 ,它严重地影响了图形的分辨率。有多种方法对邻近效应进行修正如剂量调整、图形调整等。我们以JBX 5 0 0 0LS为手段 ,用三种方法 :1图形尺寸修正 ,2大小图形分类和剂量分配 ,3图形分层和大小电流混合曝光 ,对邻近效应进行了修正 ,均取得较好效果。The electron scatter in the resist or the substrate at a significant distance from the incident beam causes pattern variation.This is called proximity effect.Many different schemes have been devised to minimize the proximity effect,such as pattern size correction and dose modulation.We use three methods to correct proximity effect in JBX?5000LS EBL system:(1)Pattern size correction,(2)divide large and small pattern as well as shot dose allocation,(3)divide pattern as well as small and large curren mixing exposure.Above different methods work well for different patterns.

关 键 词：电子束曝光 邻近效应 集成电路 

分 类 号：TN405.7[电子电信—微电子学与固体电子学] TN305.7