基于SCR的SOI ESD保护器件研究  

SCR based ESD protection in SOI technologies

作　　者：夏超[1] 王中健[1] 何大伟[1] 徐大伟[1] 张有为[1] 程新红[1] 俞跃辉[1] 

机构地区：[1]中国科学院上海微系统与信息技术研究所信息功能材料国家重点实验室,上海200050

出　　处：《功能材料与器件学报》2012年第1期17-22,共6页Journal of Functional Materials and Devices

基　　金：中科院创新基金项目(No.CXJJ-10-M36);上海市自然基金(No.09ZR1437700)

摘　　要：本文具体分析了体硅SCR(晶闸管)和SOI SCR的抗静电特性,利用软件Sentaurus对埋氧层3μm,顶层硅1.5μm的SOI衬底上的SCR进行了工艺和性能仿真,仿真结果达到了4.5kV的抗静电能力,符合目前人体模型的标准2KV。研究发现,注入剂量(9*13-8*14cm-2)增加会引起触发电压减小,维持电压升高;Trench长度(0.8-1.1μm)增加,器件触发电压几乎不变,维持电压降低;场氧化层长度(2-4.5μm)增加,触发电压和维持电压均增加。The protection mechanism of ESD protection device in SO1 technologies is studied in the paper, and the difference of bulk silicon SCR and SO1 SCR is analysed. SCR is simulated with Sentaurus that is 2D device simulation soft - ware, the result of simulation attach 2KV of industrial standard of Hunman Body Model. The result of simulation is based on SOI wafer that top silicon is 1.5 μm and buried oxide is 3 p,m. The influence of inject dose, the length of field oxide and Trench depth on the ability of device pro- tection . trigger voltage will decrease and maintain voltage will rise with inject dose increases（9 ＊ 13 -8＊ 14cm-2）, the depth of Trench rieses （0.8 - 1. 1 μm）, cause maintain voltage decreases, finally, the length of field oxide increases（2 -4.5μm）will cause trigger voltage and maintain voltage rises.

关 键 词：SOI ESD SCR Sentaurus 保护器件 

分 类 号：TN83[电子电信—信息与通信工程]