ECR结合中频磁控溅射制备掺Cu类金刚石膜工艺及性能研究  

Study on the Process and Properties of Cu Doped DLC Films Deposited by Combined ECR and Mid-frequency Magnetron Sputtering Method

作　　者：佘博西[1] 李书昌[1] 谷坤明[1] 刘锐森[1] 汤皎宁[1] 

机构地区：[1]深圳大学材料学院,深圳市特种功能材料重点实验室,广东深圳518060

出　　处：《润滑与密封》2012年第4期57-61,共5页Lubrication Engineering

基　　金：广东省科技计划项目(2009B010900035);深圳市科技计划项目(JC200903130309A);广东省大学生创新实验项目(1059010012)

摘　　要：为改善DLC膜的内应力及导热问题,采用ECR微波等离子体化学气相沉积及中频磁控溅射的方法制备掺Cu类金刚石膜,研究溅射电流对薄膜中Cu含量、薄膜表面形貌、结构及机械性能的影响。结果表明:改变溅射电流能有效地控制类金刚石膜中金属含量,拉曼光谱显示,制备的薄膜为典型的类金刚石薄膜结构;Cu的掺入使得类金刚石膜的硬度和耐磨损性能下降,但在一定溅射电流下可得到薄膜结构及机械性能均较好的掺Cu类金刚石膜。Cu doped DLC films were deposited by combined ECR microwave plasma enhanced chemical vapor deposition method and mid-frequency magnetron sputtering method in order to improve the stress and heat conduction of DLC films. The effects of sputtering current on the Cu content, surface morphology, structure and mechanical properties of the films were investigated. The results show that the metal content in DLC films can be modified efficiently by just changing sputtering current. Raman spectroscopy results show that all the prepared samples have the typical DLC structure. The hardness and wear resistance of Cu-DLC films are decreased because of the incorporation of Cu. However, Cu-DLC films with better structure and mechanical properties can be obtained under a certain sputtering current.

关 键 词：类金刚石膜 电子回旋共振 中频磁控溅射 气相沉积 

分 类 号：O484[理学—固体物理]