干冰微粒喷射清洗技术  

Carbon Dioxide Snow Jet Cleaning Technology

作　　者：郭新贺[1] 王磊[1] 景玉鹏[1] 

机构地区：[1]中国科学院微电子研究所,北京100029

出　　处：《微纳电子技术》2012年第4期258-262,共5页Micronanoelectronic Technology

基　　金：国家高技术研究发展计划(863计划)资助项目(YOGZ028003)

摘　　要：简要介绍了随着工艺节点的缩小,传统RCA清洗方法在硅片清洗工艺中的局限性和弊端,进而提出了以CO2为介质的新型干冰微粒喷射清洗方法。从CO2的物理特性出发,论述了CO2流经喷枪后形成干冰微粒的机理,并简要分析了干冰微粒喷射技术对颗粒污染物和有机污染物的清洗机理。在此基础上,介绍了自主研发的一台基于干冰微粒喷射技术的半导体清洗设备,对该设备的结构和各部分的作用作了简要介绍,论述了使用该设备对硅片进行清洗的工艺流程。通过对比实验发现,采用压强为8 MPa、纯度为5N的CO2作为气源,喷嘴前压强设置为11 MPa,使用该设备可以达到很好的清洗效果。With the drastic shrink of the semiconductor technology node,the limitations and shortcomings of traditional RCA cleaning methods are introduced briefly,and then the carbon dioxide snow jet cleaning as a novel cleaning technology for cleaning process is discussed.Based on the special physical properties of carbon dioxide,the mechanisms of dry ice micro-particle formation as the carbon dioxide passes through an orifice are discussed,and the carbon dioxide snow jet cleaning mechanisms for the particle and organic pollutants are analyzed briefly.Then the self-made semiconductor cleaning equipment based on the carbon dioxide snow jet cleaning was introduced,and the structure of the equipment and the function of each part were discussed.Besides that,the process flow of cleaning the silicon wafer with the equipment was presented.The contrast experiment shows that the equipment has a very good effect of silicon wafer cleaning when the gas pressure of the carbon dioxide source is 8 MPa,carbon dioxide with the purity of 5N is used as the gas source,and the pressure parameter before the orifice is set to 11 MPa.

关 键 词：RCA清洗 硅片清洗 CO2 干冰微粒喷射 清洗设备 

分 类 号：TN305.97[电子电信—物理电子学]