具有TiN扩散阻挡层的n-GaAs欧姆接触的可靠性  

Reliability of n\|GaAs Ohmic Contact With TiN Diffusion Barrier\+*

作　　者：张万荣 李志国[1] 穆甫臣[1] 程尧海[1] 孙英华[1] 郭伟玲[1] 陈建新[1] 沈光地[1] 张玉清 张慕义 

机构地区：[1]北京工业大学电子工程系,北京100022 [2]信息产业部第13研究所,石家庄050051

出　　处：《Journal of Semiconductors》2000年第6期608-613,共6页半导体学报（英文版）

基　　金：北京市科技新星计划资助项目

摘　　要：提出了金属 -半导体欧姆接触退化的快速评估方法——温度斜坡快速评价法 ,并建立了自动评估系统 ,用该方法和系统测得的欧姆接触退化激活能 ,和传统方法相比 ,耗时少 ,所需样品少 ,所得结果和传统方法一致 .针对传统 Au Ge Ni/Au欧姆接触系统的缺点 ,提出了加 Ti N扩散阻挡层的新型欧姆接触系统 .实验表明新型欧姆接触系统的可靠性远远优于传统 Au Ge Ni/Au欧姆接触系统 .A rapid evaluation method——temperature ramp method, for GaAs MESFETs ohmic contacts is proposed, and an automatic evaluation system has been developed. By using these method and system, activation energy for ohmic contacts degradation can be obtained with less time and samples than traditional method, but the results are in agreement with those obtained by traditional methods. In accordance with the drawbacks of traditional AuGeNi/Au ohmic contacts, a new ohmic contacts system with TiN diffusion barrier layer is proposed. Experimental results show that the reliability of ohmic contacts with TiN are greatly superior to that of traditional AuGeNi/Au ohmic contacts.

关 键 词：欧姆接触 可靠性 阻挡层 砷化镓 

分 类 号：TN304.23[电子电信—物理电子学]