晶圆清洗过程中静电电压超标原因与改进  

The Causes and Improvement of Exceeding the Standard Electrostatic Potential in Wafer Cleaning Process after Sawing

作　　者：伏国秀 刘定斌 乔友学 

机构地区：[1]天水华天科技有限公司,甘肃天水741000

出　　处：《电子与封装》2012年第4期31-33,37,共4页Electronics & Packaging

摘　　要：分析划片后的晶圆在清洗过程中静电电压严重超标的原因,提出4种改进方案,采用16种晶圆进行了验证。结果表明:清洗过程中关闭清洗机剥离胶膜用反冲气,操作人员佩戴防静电腕带,在取出晶圆过程中采用手持式可移动离子风枪对晶圆进行风淋,可解决长期存在的晶圆划片后清洗过程中表面静电电压严重超标的问题。Analyzing the causes of exceeding the standard of electrostatic potential in wafer cleaning process after sawing,we proposed 4 improving projects and validated them on 16 different kinds of wafers.The results are as follows： we suggest that the pushing power which is used to take off the blue tape should be turned off in the cleaning process,the operator can shower the wafer by using a hand-held mobile ion air gun,wearing anti-static wrist strap in the process of removing the wafer,which can solve the problem of exceeding the standard of static electricity during the wafer cleaning process.

关 键 词：封装 静电电压超标 晶圆清洗 改进方案 

分 类 号：TN305[电子电信—物理电子学]