湿法表面粗化提高倒装AlGaInP LED外量子效率  

Improvement of External Quantum Efficiency of AlGaInP-based Wafer-bonding LEDs by Wet Chemical Etching and Surface Roughening

作　　者：白继锋[1] 高欣[1] 薄报学[1] 黄尊祥 陈凯轩 马祥柱 

机构地区：[1]长春理工大学高功率半导体激光国家重点实验室,长春130000 [2]乾照光电股份有限公司,江苏扬州225000

出　　处：《半导体光电》2012年第2期188-190,193,共4页Semiconductor Optoelectronics

基　　金：国家自然科学基金项目(61177019,61179048)

摘　　要：介绍了一种利用盐酸、磷酸混合液对不同Al组分(AlxGa1-x)0.5In0.5P的选择性腐蚀特性对倒装AlGaInP红光LED进行表面粗化的方法。通过向粗化层GaInP加入适量的Al,在Al组分为0.4时,利用体积比为1∶10的HCl∶H3PO4可以得到横向尺寸约为60nm,纵向尺寸约为150nm的最有利于出光的类三角圆锥型表面结构。器件测试结果表明,在20mA注入电流下,器件外量子效率比粗化前提高了80%。A method of surface roughening is introduced to flip-chip AlGaInP red LEDs by utilizing selective etching properties of hydrochloric acid and phosphoric acid mixture to different Al compositions of（AlxGa1-x）0.5In0.5P.After adding a certain amount of Al into the roughening layer GaInP and being etched by 1∶10 volume ratio of HCl∶H3PO4,a triangle-like cone surface structure which is most benefit for light extraction could be obtained.The width of the cone is about 60 nm and the height is about 150 nm when the Al composition is 0.4.Test results show that,under 20 mA injection current,the external quantum efficiency is increased by 80% after roughening.

关 键 词：ALGAINP 选择性腐蚀 湿法腐蚀 表面粗化 外量子效率 

分 类 号：TN312.8[电子电信—物理电子学]