聚酰亚胺微刻蚀加工工艺研究  被引量:3

Research on the Polyimide Micro-Etching Process

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作  者:董拴成[1] 苑伟政[1] 马炳和[1] 邓进军[1] 郝日鹏[1] 

机构地区:[1]西北工业大学陕西省微/纳米系统重点实验室,西安710072

出  处:《微纳电子技术》2012年第5期323-327,共5页Micronanoelectronic Technology

基  金:国家自然科学基金资助项目(51105317)

摘  要:研究了RIE刻蚀聚酰亚胺的刻蚀速率、刻蚀表面粗糙度与不同加工工艺参数(包括射频功率、腔室压力、刻蚀气体成分等)之间的相互关系。刻蚀速率与射频功率、腔室压力都呈线性关系,与气体成分的关系是低SF6含量时呈线性,高SF6含量时出现饱和。刻蚀面的粗糙度几乎不受腔室压力的影响,而射频功率高于300 W和低SF6含量时粗糙度会急剧上升。采用腔室压力40 Pa、功率275 W、O2流量80 cm3/min、SF6流量20 cm3/min,通过RIE刻蚀获得了深度为39.5μm的微腔结构,为形成柔性基底空腔以及上悬结构等提供了技术基础。此外,对柔性基底固定技术进行了研究,提出了一种有效固定聚酰亚胺膜的新工艺方法。The relationships between the etch rate,etch surface roughness and different proces-sing technological parameters(including the RF power,chamber pressure,etching gas composition,etc.) were studied.The linear relationships of etch rate and RF power,etch rate and pressure were found,respectively.The linear relationship of the etch rate and gas composition was found at low SF6 content,and the saturation was appeared at high SF6 content.The roughness of the etched surface was little affected by chamber pressure,but the roughness was increased sharply when the RF power was over 275 W and the SF6 content was low.A microcavity structure with 39.5 μm depth was obtained by RIE at the pressure of 40 Pa,RF power of 275 W,O2 flux of 80 cm3/min and SF6 flux of 20 cm3/min,and providing the technological base for the formation of the flexible basal cavity and upper suspension structure.In addition,the flexible base fixed technology was studied,and a new method to fix the polyimide foil effectively was proposed.

关 键 词:酰亚胺 等离子体刻蚀 柔性微结构 聚酰亚胺膜固定 微腔成型 

分 类 号:TN305.7[电子电信—物理电子学]

 

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