SRAM型FPGA单粒子效应敏感性分析研究  

Study the Single Event Effect Sensitivity of SRAM-based FPGA

作　　者：杜守刚[1] 范隆[1] 岳素格[1] 郑宏超[1] 于春青[1] 董攀[1] 杨晓飞[1] 贾海涛[1] 

机构地区：[1]北京微电子技术研究所,北京100076

出　　处：《核电子学与探测技术》2012年第3期272-278,共7页Nuclear Electronics & Detection Technology

摘　　要：首先描述了典型的SRAM型FPGA内部通常包含的三类基本资源,并分析三类基本资源内部不同功能的电路单元对单粒子效应的敏感性,归纳出Virtex系列SRAM型FPGA中6种类型的单粒子效应敏感结构单元,并得出这些敏感结构单元的单粒子翻转、单粒子功能中断、单粒子闩锁的检测方式,最后对SRAM型FPGA单粒子效应评估研究的发展趋势做了简要总结。First, it describes a typical SRAM -based FPGA which usually contains three basic internal re- sources, and analyzes the single event effect （SEE） sensitivity of the circuit elements with the different functions of three basic internal resources, and second summarizes six types of sensitive structural elements on VITEX series SRAM - based FPGA and comes to several kinds of test procedure of SEU, SEFI, SEL of those sensitive structural elements. Finally gives a brief summary on SRAM - based FPGA SEE evaluation trends.

关 键 词：SRAM型FPGA 单粒子效应敏感性 单粒子翻转 单粒子功能中断 单粒子闩锁 

分 类 号：V19[航空宇航科学与技术—人机与环境工程]