等离子体源辅助磁控溅射法低温(200℃)制备多晶硅薄膜  

Polysilicon films grow at low temperature(200℃)by plasma assisted magnetron sputtering

作　　者：朱明[1,2] 苏元军[1,2] 范鹏辉[2] 徐军[1] 

机构地区：[1]三束材料表面改性教育部重点实验室大连理工大学,辽宁大连116024 [2]日新电机-大连理工大学联合研发中心,辽宁大连116024

出　　处：《真空》2012年第3期47-50,共4页Vacuum

摘　　要：利用电感耦合等离子体辅助中频直流脉冲磁控溅射技术在200℃成功制备出多晶硅薄膜。详细介绍了等离子体源辅助磁控溅射技术制备多晶硅的工艺过程,并对辅助等离子体源放电功率对硅薄膜结晶度的影响进行了研究。利用拉曼散射、X射线衍射、傅里叶红外光谱对所制备的硅薄膜进行了表征。Polycrystalline silicon thin film was prepared by inductively coupled plama assisted intermediate frequency dc pulsed magnetron sputtering at 200℃. The preparation process of polycrystalline silicon by plasma assisted magnetron sputtering technique was described in detail and the effects of discharge power of the plasma source on the crystalinity of deposited silicon film was studied. Various characterization techniques such as Raman scattering, X-ray diffraction （XRD）, Fourier transform infrared spectroscopy （FT-IR） were employed to characterize the deposited films.

关 键 词：多晶硅薄膜 电感耦合等离子体 磁控溅射 拉曼散射 红外光谱 

分 类 号：O484[理学—固体物理]