测定硅各向异性腐蚀速率分布的新方法  

A Novel Method for Determining the Etch Rate Distributions of Si

作　　者：杨恒[1] 鲍敏杭[1] 沈绍群[1] 李昕欣[1] 张大成[2] 武国英[2] 

机构地区：[1]复旦大学电子工程系,上海200433 [2]北京大学微电子学研究所微米/纳米技术国家级重点实验室,北京100871

出　　处：《Journal of Semiconductors》2000年第5期504-508,共5页半导体学报（英文版）

基　　金：国家自然科学基金!( 698760 0 9);传感器国家重点实验室资助项目

摘　　要：介绍了一种测定硅各向异性腐蚀速率分布的新方法 .硅各向异性腐蚀速率三维分布可由一系列晶面上的二维腐蚀速率分布表示 .利用深反应离子刻蚀技术 ( DRIE)在 {0 mn}硅片上制作出侧壁垂直于硅片表面的矩形槽 ,测量槽宽度在腐蚀前后的变化 ,就可测定各 {0 mn}面上的二维腐蚀速率分布 .将二维腐蚀速率分布组合在一起就得到了三维腐蚀速率分布 .由于 DRIE制作的垂直侧壁深度大 ,可耐受较长时间的各向异性腐蚀 ,所以只需使用一般的显微镜就能得到准确的结果 .实验得到了 40 % KOH和 2 5% TMAH中 {n1 0 }和 {n1 1A novel method for measuring the anisotropic etch rate distributions of Si is described. A three\|dimensional anisotropic etch rate distribution of Si can be described by two\|dimensional etch rate distributions in a series of crystal planes. Deep reactive ion etching (DRIE) is used for creating rectangular trenches whose sidewalls are perpendicular to the wafer surface in {0 mn } wafers. By measuring the width of the trenches before and after anisotropic etching, two\|dimensional distributions in { 0mn} wafers can be determined. With the two\|dimensional distributions, the three\|dimensional distributions can be determined. As the height of the vertical side walls made by DRIE is high enough to withstand reasonable long time etching, a conventional microscope is accurate enough. Etch rate distributions of { n 10} and {\%n11}\% crystal planes in 40% KOH and 25% TMAH are presented.

关 键 词：硅 各向异性腐蚀 深反应离子刻蚀 速率分布 

分 类 号：TN305.2[电子电信—物理电子学]