应变PMOS二维阈值电压解析模型  

An Analytical 2-D Threshold Voltage Model for Strained PMOS

作　　者：苏丽娜[1] 周东[1] 顾晓峰[1] 

机构地区：[1]江南大学电子工程系,江苏无锡214122

出　　处：《微电子学》2012年第3期415-419,共5页Microelectronics

基　　金：国家自然科学基金资助项目(11074280);中央高校基本科研业务费专项资金资助项目(JUSRP20914;JUDCF10031)

摘　　要：利用准二维方法求解二维泊松方程,建立了锗硅源漏单轴应变PMOS阈值电压的二维解析模型,理论计算结果和实验报道的结果能很好吻合。研究了不同沟道长度和漏压情况下的沟道表面势,分析了沟道长度、漏压及锗硅源漏中锗摩尔组分等参数对阈值电压的影响。利用TCAD工具进行仿真模拟,结果表明,沟道长度和漏压是单轴应变PMOS阈值电压漂移的主要影响因素,而锗摩尔组分在一定成分范围内影响较小。An analytical two-dimensional （2-D） threshold voltage model for uniaxially strained PMOS with SiGe source/drain （S/D） structure was established by solving 2-D Poisson^s equation using quasi-2-D method. Theoreti- cal calculation results were in good agreement with the reported experimental data. Channel surface potentials at dif- ferent channel lengths and drain voltages were investigated, and effects of channel length, drain voltage and germa- nium molar fraction of SiGe S/D on threshold voltage were analyzed. Simulation using TCAD tools indicated that the channel length and drain voltage were major factors for threshold voltage drift, while in a certain composition range, the molar fraction of Ge showed relatively smaller effect on threshold voltage of uniaxially strained PMOS tran sistors.

关 键 词：PMOS 应变 锗硅源漏 阈值电压 二维解析模型 

分 类 号：TN386.1[电子电信—物理电子学]