星用功率VDMOS器件SEGR效应研究  

Single event effects of power VDMOS device used in satellites

作　　者：王立新[1] 高博[1] 刘刚[1] 韩郑生[1] 张彦飞[1] 宋李梅[1] 吴海舟[1] 

机构地区：[1]中国科学院微电子研究所,北京100029

出　　处：《核技术》2012年第6期434-437,共4页Nuclear Techniques

摘　　要：对源漏击穿电压为400 V和500 V的N沟功率VDMOS器件进行碘离子单粒子辐照实验,讨论了不同偏置下两种功率器件的SEGR效应。研究结果显示:栅源电压为0 V、漏源电压为击穿电压时,器件未发生单粒子效应,表明两种星用功率器件的抗单粒子效应能力达到技术指标要求。For studying single event effect of the high-voltage radiation-hardened power VDMOS devices, two types of N-channel power VDMOS devices of the breakdown voltage 400 V and 500 V for satellite applications, developed with radiation-hardened technology, were irradiated to 105 cm-2by 255 MeV 127I ions at dose rate of 7x103 em-Ls1. Single event gate rupture （SEGR） effect of the power VDMOS devices was investigated. The results showed the power VDMOS devices were of better resistance to single event effect. No single event effects were found at the gate-source voltage of 0 V and the drain-source voltage of the breakdown voltage. The experimental results provided a reference for space application of the power VDMOS devices, and were of importance for further improvement of the design and for developments of the other types of radiation hardened VDMOS devices.

关 键 词：功率VDMOS器件 SEGR效应 加速器 注量率 

分 类 号：V443[航空宇航科学与技术—飞行器设计]