镍硅化物诱导横向晶化制备高性能多晶硅薄膜晶体管  

Fabrication of High Performance Poly-Si Thin Films Transistors by Nickel Silicide Induced Lateral Crystallization

作　　者：彭尚龙[1] 胡多凯[1] 贺德衍[1] 

机构地区：[1]兰州大学物理科学与技术学院,甘肃兰州730000

出　　处：《液晶与显示》2012年第3期303-307,共5页Chinese Journal of Liquid Crystals and Displays

基　　金：国家自然科学基金青年项目(No.61106006);中央高校基本科研业务费专项基金

摘　　要：提出一种新的采用镍硅化物作为种子诱导横向晶化制备低温多晶硅薄膜晶体管的方法。分别采用微区Raman、原子力显微镜和俄歇电子能谱对制备的多晶硅薄膜进行结构和性能表征,并以此多晶硅薄膜为有源层制备了薄膜晶体管,测试其I-V转移特性。测试结果显示,制备的多晶硅薄膜具有较低的金属污染和较大的晶粒尺寸,且制备的多晶硅薄膜晶体管具有良好的电学特性,可以有效地减小漏电流,同时可提高场效应载流子迁移率。这主要是由于多晶硅沟道区中镍含量的有效降低使得俘获态密度减少。A new crystallization method is propose silicide induced lateral crystallization. The poly- Raman spectroscopy, auger electronic spectrosco Si thin film transistor is also fabricated using thi -Si PY d for poly-Si thin film transistors by Ni thin films were characterized by micro- and atomic force microscopy. The poly- s poly-Si as active layer. And the electrical properties are obtained from ID-I（; transfer curve measurements. Compared with the thin film transistor prepared using conventional Ni induced lateral crystallization method, the fabrica- ted poly-Si thin film transistor showed lower leakage current and higher field-effect mobility. It was attributed to the reduction of Ni concentration in the poly-Si channel. Also, the trap states in grain boundaries were decreased.

关 键 词：镍硅化物 金属诱导横向晶化 多晶硅薄膜晶体管 

分 类 号：TN321.5[电子电信—物理电子学] TN304.055