高密度通孔薄膜电路工艺技术研究  

Process Technology of Thin Film Circuits with High Density Through Vias

作　　者：柳龙华[1] 解启林[1] 

机构地区：[1]中国电子科技集团公司第三十八研究所,安徽合肥230088

出　　处：《电子工艺技术》2012年第3期142-144,181,共4页Electronics Process Technology

基　　金：装备预先研究项目(项目编号:51318070119)

摘　　要：通过对薄膜电路制作工艺的系统研究,提出了一种新型的制作高密度通孔薄膜电路工艺方法,克服了高密度通孔薄膜电路对溅射用金靶、喷雾式涂胶和反应离子刻蚀等工艺技术和设备的依赖,降低了高密度通孔薄膜电路研制成本。该新型工艺方法已成功应用于延时电路、变频电路和低噪声放大器等微波组件中高密度通孔薄膜电路基板的研制。Through the systematic study on fabrication process of thin film circuits, a new process of fabricating thin film circuits with high density through vias is presented. This fabrication process can avoid the dependence on sputtering Au target, spray coating and reactive ion etching technologies, which are the key factors during the thin film circuits＇ fabrication process. The fabrication cost of thin film circuit can be reduced by using this process. And then, this process technology is successfully used in fabricating thin film circuits with high density through vias, which are widely used in true time delay module, frequency conversion module, and low noise amplifies modules.

关 键 词：薄膜电路 通孔金属化 膜层附着力 

分 类 号：TN45[电子电信—微电子学与固体电子学]