硼掺杂对热丝CVD法制备纳米晶硅薄膜微结构与光电性能的影响  

Growth and Characterization of B-Doped Si Films by Hot-Wire Chemical Vapor Deposition

作　　者：潘园园[1] 沈鸿烈[1] 吴天如[1] 张磊[1] 刘斌[1] 

机构地区：[1]南京航空航天大学材料科学与技术学院,南京211100

出　　处：《真空科学与技术学报》2012年第6期509-513,共5页Chinese Journal of Vacuum Science and Technology

基　　金：国家高技术研究发展计划(863)资助项目(2006AA03Z219);江苏高校优势学科建设工程资助项目

摘　　要：采用热丝化学气相沉积法制备了不同B2H6掺杂比例（B2H6/SiH4为2%-15%）的p型纳米晶硅薄膜,通过探索B2H6掺杂比例、晶化率、光学带隙和电学性能（电导率、载流子浓度、霍尔迁移率）之间的关系以及薄膜掺杂机理来研究B2H6掺杂比例对薄膜微结构和光电性能的影响。在掺杂比例为11%时成功获得了电导率为32 S/cm的高电导率硼掺杂nc-Si∶H薄膜。The boron-doped,hydrogenated,nano-crystalline silicon （nc-Si：H） films were grown by hot-wire chemical vapor deposition on glass substrate. The influencing growth factors,such as the ratio of gas flow rates （B2H6/SiH4）, pressure, substrate and tantalum filament temperatures, were studied. The microstructures and photoelectric properties, including the optical band-gap, conductivity, cartier concentration and hall mobility, were characterized with Raman spectroscopy. The results show that the ratio of gas flow rates strongly affects the microstructures and photo-electric properties of the p-type, nc-Si： H films. For example, grown at an optimized ratio of 11%, the conductivity of the film was found to be up to 32 S/cm. The possible mechanisms were also tentatively discussed.

关 键 词：掺杂比例 硼掺杂 纳米晶硅 热丝化学气相沉积 电导率 

分 类 号：O484[理学—固体物理]