扩散方阻对多晶硅太阳能电池效率的影响  

Influence of Sheet Resistance on Efficiency of Multicrystalline Silicon Solar Cells

作　　者：李鹏荣[1] 吴伟[1] 马忠权[1] 王义飞[1] 

机构地区：[1]上海大学理学院,上海200444

出　　处：《上海大学学报（自然科学版）》2012年第3期277-281,共5页Journal of Shanghai University:Natural Science Edition

摘　　要：在现有大规模太阳能电池生产工艺的基础上,改变扩散工艺条件,制备一系列的方块电阻发射极.在未改变其他工艺参数的条件下,当发射极方块电阻升高时,短路电流持续上升,开路电压在接近70Ω/□时接近饱和,而填充因子(fill factor,FF)则因串联电阻的增加呈下降趋势.器件的效率在70Ω/□方阻发射极时达到最大值.通过光致发光图(photoluminescence,PL)比较方阻为50和70Ω□发射极的吸杂效果,结果说明,在磷扩散过程中,硅片的晶粒、晶界以及位错区域的吸杂效果都非常明显,且50Ω/□发射极硅片的吸杂效果略优于70Ω/□的硅片.Based on the existing large-scale solar cell production process, a series of sheet resistance emitters were prepared by changing diffusion process conditions. When the emitter sheet resistance increases, short-circuit current rises continuously, and open-circuit voltage is close to saturation near 70Ω/口, while fill factor （FF） declines due to the increase of serial resistance under the condition that other process parameters are unchanged. Efficiency of the device reaches maximum when the emitter sheet resistance is 70 Ω/口. Based on this conclusion, this paper compares gettering effect of the emitter sheet resistance between 50 and 70 Ω/口 by photoluminescence （PL） images. PL images show that during the diffusion process of phosphorus in a silicon grain, grain boundary and dislocation, gettering effect of these regions is very obvious, and the absorbing effect of the 50 Ω/口 emitter silicon is slightly better than the 70Ω/口 one.

关 键 词：太阳能电池 扩散 方块电阻 吸杂 光致发光图 

分 类 号：O474[理学—半导体物理]