多晶硅片少子寿命的影响因素研究与分析  

Research and Analysis of Influence Factor of Lifetime of Polysilicon

作　　者：于丽君[1] 段晋胜[1] 

机构地区：[1]中国电子科技集团公司第二研究所,山西太原030024

出　　处：《电子工业专用设备》2012年第6期26-30,共5页Equipment for Electronic Products Manufacturing

摘　　要：为了提高多晶硅片的转换效率,提高多晶硅片少子寿命是一个重要的方法和途径,然而在生产过程中影响多晶硅片少子寿命的因素有很多,主要有杂质含量,硅片厚度及晶粒尺寸均匀性等。通过对分凝原理的研究,利用微波光电导测试原理对多晶硅锭少子寿命的分布做了分析,并对硅片厚度及晶粒尺寸进行研究,经过研究发现,多晶硅片少子寿命主要受原料金属杂质含量的大小,硅片厚度及晶粒尺寸均匀性等因素的影响。According to improving the minority carrier lifetime of polycrystalline silicon Is an important way to improve the conversion efficiency of poly crystal silicon.However,there are many factors that affect the minority carrier lifetime of multi-crystalline wafers in the production process,for example,the main impurities,the silicon thickness and grain size uniformity and so on.In this paper,according to the principle of segregation and the use of microwave conductive test principle,the research of the minority carrier lifetime of multi-crystalline silicon ingots and silicon thickness and grain size has been done,A result is found that the minority carrier lifetime of polycrystalline silicon factor is mainly affected by the raw metal impurities in the silicon,the thickness and grain size uniformity of the silicon.

关 键 词：多晶硅片 少子寿命 杂质含量 厚度 均匀性 

分 类 号：TN304.05[电子电信—物理电子学]