PVT法掺钒SiC单晶生长电阻率变化规律研究  

The Study on the Resistivity Transformation in the V-doped SiC by PVT Process

作　　者：洪颖[1] 冯玢[1] 王磊[1] 吴华[1] 郭俊敏[1] 杜萍[1] 

机构地区：[1]中国电子科技集团公司第四十六研究所,天津300220

出　　处：《电子工业专用设备》2012年第6期31-34,共4页Equipment for Electronic Products Manufacturing

摘　　要：在采用COREMA方法测试SiC晶片电阻率时发现同一晶片电阻率相差较大,主要体现在高阻(>105Ω.cm量级)和低阻(<105量级)并存,有的甚至超高阻(>1012量级)和低阻并存,针对这一测试结果,开展了相关的实验研究,SiC单晶半绝缘性能的实现是通过在单晶生长过程中掺入深能级杂质V来补偿浅施主N和浅受主B,利用二次质谱(SIMS)对同一晶片不同区域的杂质元素V、N和B含量进行测试,结果发现晶片中V和N的含量都在1×1017量级时会出现同一晶片不同区域电阻率相差较大的情况,而当V含量在1×1017量级,N含量在5×1016量级以下时,可制备电阻率均匀性好的半绝缘SiC单晶。We found that the resistivity of SiC varies widely in the same wafer with different areas during measured by SemiMap COREMA-WT （contactless resistivity mapping） , the values may be below 1× 10^5 1Ω·cm, between 1 × 10^5 -1×1012 Ω·cm, and over 1 × 10^12 Ω·cm. As we know, the vanadium act as deep acceptor to compensate all donor nitrogen and boron impurity, then SI-SiC can be obtained. Secondary ion mass spectroscopy （SIMS） was used to determine the impurities of boron, nitrogen and vanadium which play an important role in terms of resistivity. As a result, when the concentration of the vanadium and nitrogen was 1 × 10^17 cm^3, the resistivity of the wafer with different areas may be vary widely, but when the concentration of the vanadium was 1 × 10^17 cm3, and the concentration of the nitrogen was lower 5× 10^16 cm^3, SI-SiC with high resistivity uniformity can be obtained.

关 键 词：SIC 电阻率 均匀性 COREMA SIMS 

分 类 号：TN304.053[电子电信—物理电子学]