非外延集电区的超高压锗硅异质结双极晶体管  

Ultra High-voltage SiGe HBT with Non-epi Collector

作　　者：钱文生 刘冬华 胡君 段文婷 石晶 

机构地区：[1]上海华虹NEC电子有限公司,上海201206

出　　处：《固体电子学研究与进展》2012年第3期275-280,共6页Research & Progress of SSE

基　　金：国家科技02重大专项资助项目(2009ZX02303)和(2011ZX02506)

摘　　要：介绍了在0.18μm逻辑工艺平台上全新设计的超高压锗硅异质结双极晶体管(SiGe HBT),该器件改变了外延的一维纵向集电区,而采用了通过离子注入掺杂的"L形"二维集电区结构,集电区包括本征基区下方的纵向集电区和场氧底部横向集电区。该器件可在同一工艺中通过版图中横向集电区长度的变化实现不同的击穿电压,因此可制作超高压SiGe HBT,并实现不同击穿电压的超高压SiGe HBT阵列。详细阐述了该器件的制作工艺,并对器件的直流和射频性能作了系统的总结和分析。This paper outlines newly designed ultra HV SiGe HBT with 0.18 μm logic pro- cess. This transistor has 2D ＂L shape＂ implanting doped collector including vertical collector and lateral collector under intrinsic base and field oxide, respectively, instead of conventional 1D ver-tical collector with epi silicon layer. The different breakdown voltages of SiGe HBT can be ac-quired with various lateral collector lengths in layout. As the result, SiGe HBT with ultra high BVCEZ and SiGe HBT array with different BVCEZ can be fabricated without process modification. The device fabrication process is exhibited, and the device DC and RF performances are summa-rized and analyzed systematically.

关 键 词：超高压 锗硅异质结双极晶体管 击穿电压 二维集电区 

分 类 号：TN433[电子电信—微电子学与固体电子学] TN32