微波功率器件金属化布线回流加固结构  

Novel Backflow Structure Hardening Metallization System in Microwave Power Device *

作　　者：孙英华[1] 李志国[1] 程尧海[1] 张万荣 

机构地区：[1]北京工业大学电子工程系,北京100022

出　　处：《Journal of Semiconductors》2000年第7期705-710,共6页半导体学报（英文版）

基　　金：北京市自然科学基金和北京市科技新星计划资助

摘　　要：在回流动力学理论和实验研究的基础上 ,将回流加固结构应用于实际微波功率器件 .结合器件具体结构和制备工艺 ,对金属化布线电流分布和最佳回流长度进行了模拟计算和分析 ,结合实际工艺优化设计了回流加固结构 ,制备了六种结构样管 ,电热应力试验结果表明 :采用一个缝隙、缝隙宽度为 3μm的结构回流加固效果最好 ,抗热电徙动能力最强 .利用回流效应可有效降低微波管中的纵向 ( Al- Si界面 )电迁徙失效 。A novel structure has been designed and applied in metallization system of microwave power device,in which backflow effect is taken to increase the electromigration resistance.Current density distribution and backflow threshold length in metallization are simulated and analysed and therefore backflow structure is optimized.Six kinds of samples have been manufactured with different backflow lengths and gap widths.Electromigration acceleration experiments prove that the structure with one 3μm backflow gap has the highest resistance of electromagration.

关 键 词：回流结构 金属化 微波功率器件 

分 类 号：TN305[电子电信—物理电子学]