具有ESD防护及过流保护功能的VDMOS设计  

Design of VDMOS with Electro-Static Discharge and Over-Current Protection

作　　者：何建[1] 谭开洲[2] 陈光炳[2] 徐学良[2] 王建安[2] 谢家雄[3] 任敏[3] 李泽宏[3] 张金平[3] 

机构地区：[1]中国民航飞行学院,四川广汉618307 [2]中国电子科技集团公司第二十四研究所,重庆400060 [3]电子科技大学电子薄膜与集成器件国家重点实验室,成都610054

出　　处：《半导体技术》2012年第8期612-616,共5页Semiconductor Technology

摘　　要：提出了一种芯片集成实现ESD防护及过流保护功能的VDMOS器件设计。在对电流采样原理分析的基础上,提出了一种适用于功率器件的局域电流采样方法及对应的过流保护电路结构,该方案具有结构简单、低功耗的特点。利用反向串联多晶硅二极管实现对VDMOS器件栅氧化层的ESD保护。完成了VDMOS的工艺流程设计,实现了保护电路中各子元件与主功率器件的工艺兼容。二维数值模拟表明:所设计的过流保护电路在室温下能实现38.4 A的限流能力,ESD保护能够达到2 000 V(HBM),能有效提高VDMOS在系统中的稳定性和可靠性。A novel vertical double-diffusion MOSFET（VDMOS）with the functions of electro-static discharge（ESD）protection and over-current protection was proposed.The current sampling mechanism was analyzed.A partial current sampling method suitable for power devices and the corresponding over-current protection circuit were presented.ESD protection structure with anti-series poly-silicon diodes for VDMOS was provided.The process of the VDMOS was designed and the components in the protection circuit and power device were compatible on a chip.The two-dimensional simulations indicate that the device＇s maximum current is limited at 38.4 A at room temperature,and it can withstand 2 000 V of human-body model（HBM）stress,so its reliability in systems can be effectively improved.

关 键 词：垂直导电双扩散场效应晶体管(VDMOS) 过流保护 静电放电(ESD) 功率器件 可靠性 

分 类 号：TN386.1[电子电信—物理电子学]