FBAR用高质量AlN薄膜制备  

Preparation of Aluminum Nitride Thin Film for FBAR

作　　者：韩东[1] 霍彩红[1] 邓建国[1] 

机构地区：[1]中国电子科技集团公司第十三研究所,石家庄050051

出　　处：《半导体技术》2012年第8期627-629,共3页Semiconductor Technology

摘　　要：采用直流磁控反应溅射法,在基片表面引入RF偏置,在Si(111)衬底上成功制备了(002)向AlN薄膜。使用高分辨率X射线衍射仪(XRD)来表征薄膜质量。当RF偏置从0 W变化到20 W时,XRD测试(002)摇摆曲线的半高宽有着显著的变化。当RF偏置为15 W时,AlN薄膜表现出了良好的(002)生长取向。实验结果表明,适当的RF偏置能够提高Al原子和N原子反应时的活性,促进AlN薄膜的(002)择优生长。该溅射方案应用于薄膜体声波谐振器(FBAR)谐振器工艺加工,成功制作了Q值为300,机电耦合系数为5%的FBAR样品。With a RF bias on substrate,the（002）oriented aluminum nitrogen（AlN）thin films was successfully deposited on single-crystal Si（111）wafers by DC magnetron sputtering.The crystalline quality of AlN was characterized by high-resolution X-ray diffraction（HR-XRD）.As a RF bias changes from 0 W to 20 W,the full width at half maximum（FWHM）of（002）rocking curve changed significantly.The films exhibited a very high degree of（002） orientation especially when RF bias equal to 15 W.The experimetal results show that the properties of AlN films are very dependent on the energy of Al-N reaction.Film bulk acoustic resonators（FBAR） were fabricated by using the sputtering condition,and the resonator had an effective mechanical coupling coef films cient of 5% and a quality factor of 300.

关 键 词：氮化铝薄膜 磁控反应溅射 RF偏置 薄膜体声波谐振器 (002)向 

分 类 号：O484.1[理学—固体物理] TN304.23[理学—物理]