软X射线辐照引起的铟锡氧化物表面光化学反应  

PHOTOCHEMICAL REACTION ON ITO SURFACE INDUCED BY SOFT X-RAY IRRADIATION

作　　者：刘黎明[1] 熊玉卿[1] 郭云[1] 李冠斌 杨得全[1] 

机构地区：[1]中国空间技术研究院兰州物理研究所应用表面物理实验室,兰州730000

出　　处：《物理学报》2000年第9期1883-1886,共4页Acta Physica Sinica

摘　　要：利用XPS原位研究了MgKαX射线辐照对ITO表面的影响 .结果表明 ,随着X射线辐射时间的延长 ,表面辐照区域In ,Sn相对含量增加 ,而O则逐渐减少 ,同时 ,In ,Sn3d光电子峰随X射线辐射的增强而变化 .分析说明X射线的辐照导致了ITO表面光化学反应 ,氧的脱离使In ,Sn有被还原的趋势 ,受损较重的In明显存在亚氧化态 .In ,Sn俄歇参数的变化进一步证实ITO表面发生了光化学反应 .并讨论了X射线引起ITO表面光化学反应的机制 .ITO surface photochemical reaction induced by soft X\|ray (Mg Kα=1253 60?eV) irradiation is investigated in\|situ by XPS technique. The result shows that the content of In and Sn in the irradiated area goes up with the increasing irradiation time, while that of O falls. The changes of In3d, Sn3d XPS spectra and the Auger Parameter of In, Sn suggest that there is chemical reaction due to X\|ray irradiation. It can be concluded that more photo\|dissociation happens to In element according to the obvious fact that there exists sub\|oxidized state of In after exposure to X\|ray. The photochemical reaction mechanism induced by soft X\|ray irradiation is discussed.

关 键 词：X射线辐照 光化学反应 铟锡氧化物 表面 半导体 

分 类 号：O472[理学—半导体物理]