薄膜SOI RESURF结构击穿电压分析  

Breakdown Voltage Analysis for Thin Film SOI RESURF Structure

作　　者：李文宏[1] 罗晋生[1] 

机构地区：[1]西安交通大学微电子学研究所,西安710049

出　　处：《Journal of Semiconductors》2000年第2期161-168,共8页半导体学报（英文版）

摘　　要：提出了基于二维Ｐｏｉｓｓｏｎ 方程的薄膜ＳＯＩ降低表面电场（ＲＥＳＵＲＦ结构解析物理模型．并在该模型基础上，给出了一种分析薄膜ＳＯＩＲＥＳＵＲＦ结构击穿电压的方法．利用这一方法计算了漂移区长度较长的薄膜ＳＯＩＲＥＳＵＲＦ结构击穿电压与漂移区掺杂浓度的关系，并定量分析了场ＳｉＯ２ 界面电荷密度对击穿电压和漂移区临界掺杂浓度的影响．首次提出了临界场ＳｉＯ２界面电荷密度的概念，并研究了其与漂移区掺杂浓度的关系．而且计算结果与ＭＥＤＩＣＩ模拟结果符合得很好．Based on 2D Poisson equation,an analytical model is given.Meanwhile on the basis of the model,a novel approach for the breakdown voltage analysis of thin film SOI RESURF structure is proposed.Using this method,the relation between the breakdown voltage of thin film SOI RESURF structure with the longer drift region and the doping density of the drift region is calculated,and the influence of the field SiO\-2 interface charge density on the breakdown voltage and the critical doping density of the drift region is analyzed.The concept of the critical field SiO\-2 interface charge density is firstly presented,and the influence of the doping density of the drift region on it is modeled.The analytical results agree with the simulation of MEDICI well.The method is the base of the optimum design for the breakdown voltage of thin film SOI RESURF structure with the longer drift region.

关 键 词：SOI RESURF结构 击穿电压 薄膜 

分 类 号：TN304.055[电子电信—物理电子学]