直流反应磁控溅射法制备ZnO:Zr透明导电薄膜(英文)  

Preparation of Transparent Conducting ZnO:Zr Films Deposited by DC Reactive Magnetron Sputtering

作　　者：张化福[1] 类成新[1] 刘汉法[1] 袁长坤[1] 

机构地区：[1]山东理工大学理学院,淄博255049

出　　处：《人工晶体学报》2012年第4期977-981,共5页Journal of Synthetic Crystals

基　　金：Project supported by the Natural Science Foundation of Shandong Province(ZR2009GQ011)

摘　　要：以Zn∶Zr为靶材,利用直流反应磁控溅射法制备了ZnO∶Zr透明导电薄薄膜。研究了沉积压强对ZnO∶Zr薄膜形貌、结构、光学及电学性能的影响。实验结果表明所制备的ZnO∶Zr为六方纤锌矿结构的多晶薄膜,具有垂直于衬底方向的c轴择优取向。沉积压强对ZnO∶Zr薄膜的晶化程度、形貌、生长速率和电阻率影响很大,而对其光学性能如透光率、光学带隙及折射率影响不大。当沉积压强为2 Pa时,ZnO∶Zr薄膜的电阻率达到最小值2.0×10-3Ω·cm,其可见光平均透过率和平均折射率分别为83.2%和1.97。Transparent conducting ZnO： Zr films were synthesized by DC reactive magnetron sputtering technique using Zn： Zr targets. The effect of deposition pressure on the structural, morphological, electrical and optical properties was analyzed. The experimental results show that the deposited ZnO： Zr films are polycrystalline with a hexagonal structure and have a preferred orientation along the c-axis perpendicular to the substrate. The crystallinity, morphology, resistivity and growth rate greatly depend on deposition pressure while the optical properties including transmittance, optical band gap and refractive index do not change much with the variation of deposition pressure. The film deposited at the optimal pressure of 2 Pa has a resistivity of 2.0 ×103 Ω· cm with an average transmittance of 83.2% in the wavelength of 500-800 nm and an average refractive index of 1.97 in the wavelength of 450-850 nm.

关 键 词：直流反应磁控溅射 ZnO∶Zr薄膜 透明导电薄膜 沉积压强 

分 类 号：TN304.2[电子电信—物理电子学] TN304