1.2～1.4GHz 300W宽带硅微波脉冲大功率管  

1.2～1.4GHz 300W Broadband Silicon Microwave Pulsed High Power Transistors

作　　者：王因生[1] 丁晓明[1] 蒋幼泉[1] 傅义珠[1] 王佃利[1] 王志楠[1] 盛国兴[1] 严德圣[1] 

机构地区：[1]南京电子器件研究所,南京210016

出　　处：《固体电子学研究与进展》2012年第4期356-360,397,共6页Research & Progress of SSE

摘　　要：介绍了L波段宽带硅微波脉冲300W大功率晶体管研制结果。该器件采用微波功率管环台面集电极结终端结构、非线性镇流电阻和热稳定等新工艺技术,在1.2～1.4GHz频带内,脉宽150μs,占空比10%和40V工作电压下,全带内脉冲输出功率大于300W,功率增益大于8.75dB,效率大于55%。Using the novel technologies such as so-called mesa junction termination structure with one guard ring .un-linear blasting resistor of microwave power transistor and heat stability, the L-band silicon pulsed power transistor has been developed. The results show that the pulsed output power is over 300 W,the power gain is more than 8. 75 dB and the collector efficiency is more than 55% covering the frequency from 1.2-1.4 GHz under the conditions of 40 V supply voltage,150 μs pulse width and 10% duty cycle.

关 键 词：硅 微波 功率管 镇流电阻 

分 类 号：TN323.4[电子电信—物理电子学]