半导体位置敏感探测器新型结构研究  

A new structure study of position sensitive detector

作　　者：李田泽[1] 申晋[1] 盛翠霞[1] 韩玉莹[1] 暴敏[1] 

机构地区：[1]山东理工大学现代光电技术研究所,山东淄博255049

出　　处：《电子元件与材料》2012年第9期23-26,共4页Electronic Components And Materials

基　　金：国家自然科学基金资助项目(No.60877050);山东省自然科学基金资助项目(No.2004ZX30);山东省教育厅基金资助项目(No.J08LJ12)

摘　　要：在分析半导体光电位置敏感探测器(PSD)二维枕形结构特性的基础上,采用光敏面与边缘区域分别注入不同离子剂量的方法,研究了一种PSD新型结构,这种结构的PSD边缘采用了带宽很窄的正方形状的离子注入电阻带形式,输出电极附加了一个较小的正方形框架作为阳极,通过在PSD边缘电阻带中注入较高离子剂量的元素,改变PSD边缘电阻带的电阻和有效感光面区域电阻的比值;实验模拟结果显示:新型结构的PSD可获得较高的位置分辨率、较大的有效光敏面积以及较小的非线性。Based on the analyzing of the two-dimensional pincushion position sensitive detector（PSD） structural characteristics,a new PSD structure was studied by implanting different amounts of ions into the photosensitive surface and the edge region.Square ion implantation electric resistance belt with quite narrow band at the edge of PSD,and a small square frame attached to output electrode as the anode were adopted in this new structure.The resistance ratio of edge region and efficient photosensitive surface was changed by implanting higher amount of ions at the edge region of PSD.In experimental simulation,a higher position resolution,larger efficient photosensitive area and smaller non-linearity could be obtained by the new PSD structure.

关 键 词：离子注入 位置敏感探测器 非线性 分辨率 

分 类 号：TN929[电子电信—通信与信息系统]