石墨烯的SiC外延生长及应用  

Epitaxial Growth of Graphene on SiC Substrate and Their Application

作　　者：陆东梅[1,2] 杨瑞霞[1] 孙信华[1] 吴华[3] 郝建民[3] 

机构地区：[1]河北工业大学信息工程学院,天津300401 [2]河北工业大学理学院,天津300401 [3]中国电子科技集团公司第四十六研究所,天津300220

出　　处：《半导体技术》2012年第9期665-669,共5页Semiconductor Technology

摘　　要：碳化硅外延生长法是近几年重新发展起来的一种制备石墨烯的方法,具有产物质量高、生长面积大等优点,逐渐成为了制备高质量石墨烯的主要方法之一。另外,从石墨烯在集成电路方面的应用前景来看,该方法最富发展潜力。从SiC不同极性面石墨烯的生长过程、缓冲层的影响及消除方法等方面评述了碳化硅外延法制备的特点并对其研究进展进行了介绍。最后简要概述了国内外关于SiC外延石墨烯在场效应晶体管方面的应用情况,指出了目前需要解决的主要技术问题,并对其发展前景进行了展望。Epitaxial growth on SiC substrate is a way developed new recently,which gradually becomes one of the most effective techniques for the preparation of graphene with the advantages of obtaining high quality and a large area of products.In addition,judging from the application prospects of graphene in integrated circuits,this method has the most development potential.The characteristics and the advances in the study on such technique from aspects of the growth process of graphite from different polarity of the SiC surface as well as influences and elimination methods of the buffer layer were reviewed.Finally,the recent applications of graphene in field-effect transistors at home and abroad are briefly describes,and points out the main technical problems to be solved,and prospect of the future trends of it is also offered.

关 键 词：石墨烯 SIC 外延 缓冲层 场效应晶体管 

分 类 号：TN304.24[电子电信—物理电子学] TN304.054