磁控反应溅射制备Ge_xC_(1-x)薄膜的结构  

Structure of Ge_xC_(1-x) Films Prepared by Magnetron Reactive Sputtering

作　　者：刘正堂[1] 耿东生[1] 宋建全[1] 朱景芝[1] 郑修麟[1] 

机构地区：[1]西北工业大学材料科学与工程学院,陕西西安710072

出　　处：《金属热处理学报》2000年第2期95-99,共5页

基　　金：航空科学基金!资助 (93G5 312 0 )

摘　　要：利用射频磁控反应溅射以Ar、CH4 为原料气体 ,在较宽的工艺参数范围内制备出了GexC1-x薄膜。利用X射线衍射 (XRD)、X射线光电子谱 (XPS)对制备的薄膜进行了分析。结果表明 ,GexC1-x薄膜的结构强烈依赖于制备的工艺参数。当沉积温度较低、射频功率不大时 ,GexC1-x薄膜主要为非晶态结构。随着沉积温度升高、射频功率增大 ,薄膜中出现Ge微晶相。GexC1-x薄膜中Ge与C发生电荷的转移 ,形成化学键。The Ge xC 1-x films were prepared by radio frequency magnetron reactive sputtering in Ar/CH\-4 in a wide range of processing parameters.The structure of Ge xC 1-x films was investigated by using X\|ray diffraction (XRD) and X\|ray photo\|electron spectroscopy (XPS).The results show that the as\|deposited Ge xC 1-x films have an amorphous structure.If the RF power is increased or substrate temperature is elevated,germanium microcrystals will appear in the amorphous films.The results of XPS and IR indicated that there existed a charge transfer between germanium and carbon in the films.

关 键 词：GexC1-x薄膜 磁控反应溅射 薄膜结构 

分 类 号：TN213[电子电信—物理电子学]