氧回旋离子束刻蚀化学气相沉积金刚石膜  

Etching of CVD diamond films using oxygen cyclotron ion beams

作　　者：吴俊[1] 马志斌[1] 沈武林[1] 

机构地区：[1]武汉工程大学材料科学与工程学院,武汉工程大学湖北省等离子体化学与新材料重点实验室,武汉430073

出　　处：《强激光与粒子束》2012年第10期2459-2463,共5页High Power Laser and Particle Beams

基　　金：国家自然科学基金项目(10875093)

摘　　要：利用非对称磁镜场电子回旋共振等离子体产生的氧回旋离子束刻蚀了化学气相沉积金刚石膜,研究了工作气压和磁电加热电压对金刚石样品附近的离子温度和密度的影响,并分析了金刚石膜的刻蚀和机械抛光效果。结果表明:当工作气压为0.03Pa,磁电加热电压为200 V时,离子温度和密度最大,分别为7.38eV和23.8×1010cm-3。在此优化条件下刻蚀金刚石膜4h后,其表面粗糙度由刻蚀前的3.525μm降为2.512μm,机械抛光15min后,表面粗糙度降低为0.517μm,即金刚石膜经离子束刻蚀后可显著提高机械抛光效率。CVD diamond thick films were etched by oxygen cyclotron ion beams and polished by mechanical methods and the effect was investigated. The influences of gas pressure and bias voltage of anode cylinders on the ion parameters were studied by an ion sensitive probe. The etching of CVD diamond films was accomplished under the optimized gas pressure and bias voltage of the anode cylinder. The optimized gas pressure and bias voltage of the anode cylinder for diamond etching are 0.03 Pa and 200 V, respectively. Under these conditions, the ion temperature is 7.38 eV and the ion density is 23.8× 10^10cm^-3. The diamond film was etched for 4 h by the oxygen cyclotron ion beam under temperature of the sample holder of 600 ℃ and then polished for 15 min by mechanical lapping. The results show that the diamond surface roughness decreases from 3. 525 μm to 2. 512 μm by ion beam etching, and then decreases to 0. 517μm by mechanical polishing. The efficiency of mechanical polishing is dramatically im proved when the diamond film is etched by oxygen cyclotron ion beams.

关 键 词：离子灵敏探针 离子温度 金刚石膜 刻蚀 回旋离子束 

分 类 号：TQ164[化学工程—高温制品工业] O539[理学—等离子体物理]