A1_2O_3钝化及其在晶硅太阳电池中的应用  

The passivation of A1_2O_3 and its applications in the crystalline silicon solar cell

作　　者：张祥[1] 刘邦武[1] 夏洋[1] 李超波[1] 刘杰[1] 沈泽南[1] 

机构地区：[1]中国科学院微电子器件与集成技术重点实验室,北京100029

出　　处：《物理学报》2012年第18期444-452,共9页Acta Physica Sinica

基　　金：国家自然科学基金(批准号:61106060)资助的课题~~

摘　　要：介绍了Al_2O_3的材料性质及其原子层沉积制备方法,详细阐述了该材料的钝化机制(化学钝化和场效应钝化),并从薄膜厚度、热稳定性及叠层钝化等角度阐释其优化方案.概述了Al_2O_3钝化在晶体硅太阳电池中的应用,主要包括钝化发射极及背面局部扩散电池和钝化发射极及背表面电池.最后,对Al_2O_3钝化工艺的未来研究方向和大规模的工业应用进行了展望.The material characteristics and one of the preparation methods, atomic layer deposition of A12 O3 are introduced. The passivation mechanisms （chemical passivation and field-effect passivation） of A1203 films are demonstrated comprehensively, and optimization methods from the angles of film thickness, thermal stability and stack passivation are illuminated. The application of A12 Oa passivation in the crystalline silicon solar cell is provided, including passivated emitter rear locally diffused cell and passivated emitter and rear cell. Finally, the future study of the A1203 passivation process and the application to industry production are proposed.

关 键 词：氧化铝(A1_2O_3) 原子层沉积 晶硅太阳电池 钝化 

分 类 号：TM914.4[电气工程—电力电子与电力传动]