基于CF_4/Ar高密度感应耦合等离子体的BZN薄膜的刻蚀工艺研究  

Study on Etching of BZN Thin Films Based on CF_4/Ar High Density Inductively Coupled Plasma

作　　者：王刚[1] 李威[1] 李平[1] 李祖雄[1] 范雪[1] 姜晶[1] 

机构地区：[1]电子科技大学电子薄膜与集成器件国家重点实验室,成都610054

出　　处：《材料导报》2012年第18期1-3,13,共4页Materials Reports

基　　金：电子薄膜与集成器件国家重点实验室创新基金(CXJJ200905);国家科技重大专项项目(2009ZX02305-013-001)

摘　　要：使用CF4/Ar高密度感应耦合等离子体(ICP)对磁控溅射法制得的铌酸锌铋(BZN)薄膜进行了干法刻蚀工艺研究。分析了BZN薄膜的刻蚀速率随工艺气体流量比、总流量和工作压强的改变而出现极大值的原因,展示了BZN薄膜的刻蚀速率随ICP功率的增大而线性增加的趋势。研究结果表明,使用CF4/Ar感应耦合等离子体对BZN薄膜进行刻蚀的机理为物理辅助的化学反应刻蚀。BZN薄膜的最佳刻蚀工艺参数为CF4/Ar流量比3/2、总流量25sccm、工作压强1.33Pa、ICP功率800W,使用此参数对BZN薄膜进行刻蚀,最大刻蚀速率为26nm/min,刻蚀后薄膜边缘齐整、表面光滑、形状完整。The etching characteristics of the bismuth zinc niobate （BZN） thin film deposited by magnetron sputtering were investigated in CF4/Ar high density inductively coupled plasmas （ICP）. Maximum etch rate of BZN thin film was illustrated with the variation of gas flow ratio, total gas flow, and process pressure. With the increase of ICP power the etch rate of BZN thin film increased monotonously. The results indicated that the etching mechanism of the BZN thin film in CF4/Ar inductively coupled plasmas was physics assisted chemical reactive etching. Optimum etching parameters were obtained for the BZN thin films： 3/2 for CF4/Ar gas flow ratio, 25sccm for total gas flow, 1.33Pa for process pressure, and 800W for ICP power. The maximum etch rate of the BZN thin film was approxi- mately 26 nm/min, and the surface morphology of the etched BZN thin film was smooth and hardly changed in shape.

关 键 词：BZN薄膜 感应耦合等离子体 干法刻蚀 刻蚀速率 表面形貌 

分 类 号：TN405.98[电子电信—微电子学与固体电子学]