腐蚀工艺条件对InP晶片表面状况的影响  

Effect of Etching Conditions on the Surface Quality of InP Wafers

作　　者：刘春香[1] 杨洪星[1] 于妍[1] 赵权[1] 

机构地区：[1]中国电子科技集团公司第四十六研究所,天津300220

出　　处：《半导体技术》2012年第10期772-775,共4页Semiconductor Technology

摘　　要：对InP晶片的化学腐蚀特性进行了分析,研究了酸性腐蚀液(盐酸系列腐蚀液)的配比、腐蚀液温度等工艺条件对InP晶片腐蚀速率、表面腐蚀形貌和化学腐蚀片表面粗糙度的影响。研究结果表明,腐蚀液温度为室温时,改变腐蚀液配比,InP晶片的腐蚀速率变化不明显,而当腐蚀液温度发生变化时则腐蚀速率、晶片表面腐蚀形貌(显微镜下的表面状况)和化学腐蚀后晶片的表面粗糙度均有较大变化,当腐蚀液温度控制在一定范围时,晶片表面光洁,显微镜下观察到的腐蚀图形均匀一致。研究结果对确定InP晶体加工过程中的化学腐蚀工艺有一定的指导意义。The chemical etching characteristic of InP wafers was analyzed.The effects of the etching process parameters,such as the proportion and temperature of the hydrochloric acid mixtures on the chemical etching rates,surface quality and surface roughness were researched.The results of the experiment indicated that the etching rate had no remarkable changes,though the solution proportion was changed at room temperature.The etching rate,surface quality and roughness appeared difference as the temperature of chemical was changed.The etching wafer with good surface conditions could be obtained,which showed an uniform morphology under the microscope view,when the temperature of the corrosive liquid was controlled in a certain range.The results could support the studies on process parameters of InP chemical etching.

关 键 词：磷化铟 腐蚀条件 腐蚀速率 形貌 粗糙度 

分 类 号：TN305.2[电子电信—物理电子学]