GaAs MESFET的漏源电压对旁栅阈值电压的影响  

Influence of GaAs MESFETs Drain-Source Voltage on Sidegating Threshold Voltage

作　　者：丁勇[1] 赵福川[2] 毛友德[1] 夏冠群[2] 赵建龙[2] 

机构地区：[1]合肥工业大学,合肥230009 [2]中国科学院上海冶金所,上海200233

出　　处：《半导体技术》2000年第4期28-30,共3页Semiconductor Technology

基　　金：国家自然科学基金!69676003

摘　　要：研究了改变MESFET漏源电压大小和交换源漏电极对旁栅阈值电压的影响，并从理论上解释了与高场下衬底深能级EL2的碰撞电离关系。In this paper the variation of the sidegating threshold voltage by varying the drainsource voltage and exchanging drain and source electrode are studied. And the variation which is closely related to the impact ionization of deep EL2 under high electric field are explained.

关 键 词：旁栅效应 漏源电压 砷化镓 MESFET 

分 类 号：TN386[电子电信—物理电子学]