氢化及沉积温度对掺铝ZnO透明导电薄膜性能影响  

Effects of hydrogen treatment and substrate temperatures on the properties of Al-doped ZnO films

作　　者：周洪彪[1] 张化宇[1] 王志刚[1] 

机构地区：[1]哈尔滨工业大学深圳研究生院,深圳518055

出　　处：《复合材料学报》2012年第5期83-87,共5页Acta Materiae Compositae Sinica

基　　金：国际合作项目(2009DFR50160;2009DFR50350);哈尔滨市重点技术研发项目(2009AA2BG022;2009AA1BE093)

摘　　要：采用射频磁控溅射方法在玻璃衬底上制备了掺铝ZnO透明导电薄膜(AZO)。为了降低AZO薄膜的电阻率,采用在溅射气氛中通入一定比例H2的方法对AZO薄膜进行氢化处理,并研究了溅射气氛中H2含量及衬底温度对AZO薄膜氢化效果的影响。结果表明:在低温条件下,氢化处理能有效降低AZO薄膜的电阻率;在衬底温度为100℃的低温条件下,通过调节溅射气氛中H2的比例,制备了电阻率为6.0×10-4Ω.cm的高质量氢化AZO薄膜,该电阻值低于同等条件下未氢化AZO薄膜电阻值的1/3;但随着衬底温度的升高,氢化处理对薄膜电学性能的改善效果逐渐减弱。Al-doped ZnO （AZO） transparent conducting films were successfully prepared on glass substrates by radio-frequency （RF） magnetron sputtering. In order to reduce the resistivity of the thin films, the AZO film was hydrogenated with the addition of H2 in the sputtering atmosphere. The effects of hydrogen ratio in the sputtering ambient and substrate temperature on the effectiveness of hydrogen incorporation in Al-doped ZnO films were investigated. The results show that hydrogen treatment can effectively reduce the resistivity of AZO thin films at low temperatures. At the low substrate temperature of 100℃, the high-quality AZO thin films with the lowest resistivity of 6.0×10^-4 Ω·cm can be obtained by adjusting the H2 ratio in sputtering ambient. The resistivity of AZO thin film with hydrogen incorporation is less than 1/3 compared with that of thin film without hydrogen incorporation under the same condition. Moreover, the improvement of hydrogen treatment on electrical properties is gradually weakened with the substrate temperature increasing.

关 键 词：AZO薄膜 射频磁控溅射 氢化 衬底温度 电阻率 

分 类 号：TB332[一般工业技术—材料科学与工程] TQ34[化学工程—化纤工业]