GaN缓冲层对直流反应磁控溅射AlN薄膜的影响(英文)  

Effect of GaN Buffer Layers on Deposition of AlN Films by DC Reactive Magnetron Sputtering

作　　者：王新建[1,2] 宋航[1] 黎大兵[1] 蒋红[1] 李志明[1] 缪国庆[1] 陈一仁[1,2] 孙晓娟[1,2] 

机构地区：[1]发光学及应用国家重点实验室中国科学院长春光学精密机械与物理研究所.吉林长春130033 [2]中国科学院大学.北京100039

出　　处：《发光学报》2012年第10期1089-1094,共6页Chinese Journal of Luminescence

基　　金：国家自然科学基金(51072196,51072195)资助项目

摘　　要：通过直流磁控反应溅射制备了氮化铝(AlN)薄膜,研究了沉积条件与氮化镓(GaN)缓冲层对薄膜质量的影响。利用X-射线衍射仪(XRD)和扫描电镜(SEM)表征了AlN薄膜的晶体结构和表面形貌。XRD研究结果表明,低工作压强、短靶距和适当的氮气偏压有利于(002)择优取向的AlN薄膜沉积。随着沉积时间的增加,沉积在50 nm厚的GaN缓冲层上的AlN薄膜的(002)面的衍射峰的半高宽急剧减小,而沉积在1μm厚的GaN薄膜上的AlN薄膜的(002)面的衍射峰的半高宽几乎不变。SEM测试结果表明:在沉积的初期,沉积在1μm厚的GaN薄膜上的AlN薄膜的(002)面的晶粒大小分布比沉积在50 nm厚的GaN缓冲层上的AlN薄膜的均匀,而随着沉积时间的增加,它们的晶粒大小分布几乎趋向一致。AlN films were prepared by DC reactive magnetron sputtering,and the effects of deposition conditions and GaN buffer layers on their qualities were also investigated.The crystal structure and surface morphology of films were characterized by X-ray diffractometer（XRD） and scanning electron microscopy（SEM）.The XRD results show that low pressure,short target-to-substrate distance and appropriate N 2 partial pressure can facilitate the（002） preferential orientation AlN films.With the increase of deposition time the full width half maximum of（002） diffraction peak for the films deposited on 50-nm-thick GaN buffer layers decreases drastically,but it was nearly unchanged for AlN films deposited on 1-μm-thick GaN films.The SEM measurements reveal that the grain size distribution of AlN film deposited on 1-μm-thick GaN films is much uniformer than on 50-nm-thick GaN buffer layers in the early stages of deposition,and with the increase of deposition time their grain size distributions can nearly reach the same.

关 键 词：ALN GAN缓冲层 晶体结构 晶粒尺寸 

分 类 号：O76[理学—晶体学]