高迁移率In0.6Ga0.4As沟道MOSHEMT与MOSFET器件特性的研究  

Study on high mobility In_(0.6)Ga_(0.4)As channel MOSHEMT and MOSFET

作　　者：常虎东[1] 孙兵[1] 卢力[1] 赵威[1] 王盛凯[1] 王文新 刘洪刚[1] 

机构地区：[1]中国科学院微电子研究所、微波器件与集成电路研究室,北京100029 [2]中国科学院物理研究所,北京100190

出　　处：《物理学报》2012年第21期418-423,共6页Acta Physica Sinica

基　　金：国家重点基础研究发展计划(批准号:201 1CBA00605,2010CB327501);国家科技重大专项(批准号:2011ZX02708-003)资助的课题~~

摘　　要：从模拟和实验两个方面对高迁移率In_(0.6)Ga_(0.4)As沟道金属氧化物半导体高电子迁移率晶体管(MOSHEMT)和金属氧化物半导体场效应晶体管(MOSFET)器件开展研究工作.研宄发现InAlAs势垒层对Ino_(0.6)Ga_(0.4)AsMOSHEMT的特性具有重要影响.与Ino_(0.6)Ga_(0.4)As MOSFET相比,Ino_(0.6)Ga_(0.4)As MOSHEMT表现出优异的电学特性.实验结果表明,In_(0.6)Ga_(0.4)As MOSHEMT的有效沟道迁移率达到2812 cm^2/V.s^(-1),是In_(0.6)Ga_(0.4)As MOSFET的3.2倍.0.02 mm栅长的MOSHEMT器件较相同栅长的MOSFET器件具有更高的驱动电流、更大的跨导峰值、更大的开关比、更高的击穿电压和更小的亚阈值摆幅.High-mobility In0.6Ga0.4As channel metal oxide semiconductor high electron mobility transistor （MOSHEMT） and metal oxide semiconductor field effect transistor （MOSFET） are investigated based on simulation and experiment in this paper. It is found that InAlAs barrier layer has a great influence on the characteristics of In0.6Ga0.4As MOSHEMT. In0.6Ga0.4As MOSHEMT exhibits excellent electrical characteristics compared with In0.6Ga0.4As MOSFET. The experimental results show that the effective channel mobility of MOSHEMT is 2812 cm2/V·s-1, which is 3.2 times that of MOSFET. A 0.02 mm gate length MOSHEMT shows higher drive current, peak transconductance, Ion/Ioff ratio and gate breakdown voltage and lower sub-threshold swing than the MOSFET with the same gate length.

关 键 词：金属氧化物半导体高电子迁移率晶体管 金属氧化物半导体场效应晶体管 INGAAS AL2O3 

分 类 号：TN386[电子电信—物理电子学]