O_(2)反应离子深刻蚀PMMA  

Deep O_2RIE PMMA Micro-structures

作　　者：俞爱斌[1] 丁桂甫[1] 杨春生[1] 郭晓芸[1] 李昌敏[1] 毛海平[1] 倪智萍[1] 

机构地区：[1]上海交通大学信息存储研究中心薄膜与微细加工开放实验室,上海200030

出　　处：《微细加工技术》2000年第3期39-43,共5页Microfabrication Technology

摘　　要：高深宽比结构是提高微器件性能的重要环节之一。利用RIE深刻技术加工具有高深宽比结构的图形 ,方法简单 :它不象LIGA技术那样 ,需昂贵的同步辐射光源和特制的掩模板 ,对光刻胶的要求也不是特别高 ,利用这种技术深刻蚀PMMA膜 ,以Ni作掩模 ,采用普通的光刻胶曝光技术和湿法刻蚀的方法将Ni掩模图形化 ,然后利用O2 RIE技术刻蚀PMMA ,可以得到深度达 1 0 0 μm ,深宽比大于 1 0的微结构 ,图形表面平整 ,侧壁光滑垂直。在刻蚀过程中 ,氧气压、刻蚀功率等工艺参数对刻蚀结果影响较大。High Aspect Ratio microstructure is very important for improving microdevices' characteristics.It is very convenient to use RIE deep etching technology to fabricate high aspect ratio micro?structures.It needn't expensive synchrotron radiation source and special developed mask which are needed for LIGA Technique.We use this technology to deep etch PMMA.We use Ni as mask which was patterned by chemical etching.The etching depth can get up to 100μm and the aspect ratio is larger than 10.The etched surface is smooth and the side?wall is vertical.The process parameters(O 2 pressure,etching poweretc.)during the etching have a large effect on the etching results.

关 键 词：反应离子刻蚀 高深宽比 微结构 PMMA 

分 类 号：TN305.7[电子电信—物理电子学]