改进的低压LEC法生长半绝缘GaAs单晶  

Modified Low Pressure LEC Growth of Undoped Semi- Insulating GaAs Crystals

作　　者：莫培根[1] 范向群[1] 周炎德[1] 吴巨[1] 

机构地区：[1]中国科学院上海冶金研究所

出　　处：《固体电子学研究与进展》1990年第1期94-100,共7页Research & Progress of SSE

摘　　要：本文提出了改进的低压LEC/PBN法获得稳定的熔体化学计量比的条件,研究了晶体的电学性质、位错密度、C含量及EL2浓度等特性,并考察了高温热处理对晶体特性的影响.A modified low pressure in-situ synthesis LEC/PBN method of growing undoped semi-insulating GaAs crystals has been established. The key points of controlling melt composition and As vaporation during synthesing and growing have been described. By this novel approach, semi-insulating GaAs crystals are able to be growa from, the nominal melt composition in the range of 0.491-0.499 As fraction with high reproducibility.On the basis of the experimental results, the features of the modified low pressure LEC in comparison with the conventional high pressure LEC technique have been summarized. Some characteristics of the as-grown undoped semi-insulating GaAs crystals including electrical properties, dislocation density and its distributions, carbon and EL2 concentrations and the thermal annealing effects have been reported. The results show that these properties are comparable to those of crystals grown by the conventional high pressure LEC method.

关 键 词：GAAS单晶 LEC法 低压 生长 

分 类 号：TN304.23[电子电信—物理电子学]