掺氧多晶硅(SIPOS)薄膜结晶学性质研究  

Crystallographic Study of Polysilicon Doped with Oxygens

作　　者：潘尧令 王云珍[2] 王济身[2] 

机构地区：[1]上海科技大学分部技术物理系 [2]华东师范大学电子科学技术系

出　　处：《固体电子学研究与进展》1990年第4期364-368,共5页Research & Progress of SSE

摘　　要：本文用XRD,RHEED和SEM对LPCVD掺氧多晶硅的结晶学性质进行了研究.结果表明,对于含氧量为8～37at%预淀积SIPOS薄膜其结构呈无定形.当进行高温热退火(T_a≥900℃)时,薄膜经历了一个再结晶过程.晶粒度的大小与退火条件有关;而修氧多晶硅中的含氧量对再结晶过程具有抑制作用.X-ray diffraction, high-energy electron diffraction and scaning electron microscope were used to study the crystallographic properties of doped-oxygen poly-silicon films obtained by LPCVD. The as-deposited films having a range of oxygen content from 8at% to 37at% appeared amorphous. Heat annealing processes (Ta≥900℃) caused recrystal growth. The size of the silicon crystalline formed in the silicon phase by heat-treatment was related to the annealing temperature, and the oxygen content suppressed observable grain growth during anealing.

关 键 词：掺氧多晶硅 薄膜 结晶学 硅 

分 类 号：TN304.12[电子电信—物理电子学]