梯形侧壁槽结构超结MOSFET的仿真研究  

Simulation Research of Tapered Sidewall Trench Superjunction MOSFET

作　　者：李立[1] 胡冬青[1] 周东海[1] 吴立成[1] 

机构地区：[1]北京工业大学,北京100124

出　　处：《电力电子技术》2012年第12期84-86,共3页Power Electronics

基　　金：国家自然科学基金(61176071)~~

摘　　要：仿真研究了垂直侧壁槽(Type1)和梯形侧壁槽(Type2和Type3)600 V超结金属氧化层半导体场效晶体管(MOSFET)击穿电压随电荷失衡的变化关系。在p柱、n柱均匀掺杂条件下,Type1具有最高峰值击穿电压,出现在p柱、n柱掺杂浓度相等条件下;Type2具有最低峰值击穿电压,出现在p柱掺杂浓度略低于n柱掺杂浓度条件下:Type3的峰值击穿电压高于Type2,但击穿电压对电荷失衡敏感度最高。p柱采用高斯分布,可使梯形侧壁槽结构超结MOSFET的峰值击穿电压达到与垂直槽结构相当的结果。且击穿电压对电荷失衡敏感度与结构有关:Type2在p柱浓度欠补偿,Type3在p柱浓度过补偿情况下更利于工艺控制。The change of breakdown voltage of 600 V vertical sidewall trench superjunction metal-oxide-semiconductor field-effect transistor（MOSFET）（Type1 ） and 600 V tapered sidewall trench superjunction MOSFET（Type2 and Type3） with the charge imbalance are simulated.In p-column and n-column uniform doping conditions,Typel has the highest peak breakdown voltage under the condition of p-column and n-column doping concentration equal,Type2 has the lowest peak breakdown voltage under the condition of p-column doping concentration slightly lower than n-column doping concentration, the peak breakdown voltage of Type3 is higher than Type2, but the sensitivity of breakdown voltage in the charge imbalance state is highest.The Gaussian dopant profile in p-column can make the peak break- down voltage of the tapered sidewall trench superjunction MOSFET achieve the same level of peak breakdown voltage of the vertical sidewall trench superjunction MOSFET.The sensitivity of breakdown voltage in the charge imbalance state is related to the structure：Type2 under the condition of p-column undercompensation and Type3 under the con- dition of p-column overcompensation are beneficial to the process control.

关 键 词：金属氧化层半导体场效晶体管 梯形侧壁 击穿电压 

分 类 号：TN386.1[电子电信—物理电子学]