浅结激光退火的实验研究及工艺模型  

Experimental Study on Laser Anneal of Shallow Junctions and Its Process Model

作　　者：李岱[1,2] 严利人[1,2] 张伟[1,2] 周卫[1,2] 刘志弘[1,2] 

机构地区：[1]清华大学微电子学研究所,北京100084 [2]清华大学信息科学与技术国家重点实验室(筹),北京100084

出　　处：《微电子学》2012年第6期889-892,896,共5页Microelectronics

基　　金：国家科技重大专项课题资助项目(2009ZX02037-002)

摘　　要：随着器件尺寸缩小,浅结、超浅结的制作日益成为重要的工艺模块。对于22nm及以下技术代来说,除了采用低能离子注入获得极浅的原始注入分布外,通常还采用短时或者瞬时激光退火来激活注入杂质,以保持原始的注入杂质不发生明显的扩散再分布。详细介绍了一台激光退火设备的搭建情况,利用所搭建的激光退火装置进行浅结、超浅结的激光退火实验研究。另一方面,鉴于当前激光退火工艺模型的欠缺,在实验数据的基础上,初步分析和建立了专门针对浅结激光退火处理的工艺模型。As IC technology evolves into 22 nm node and beyond, junctions is becoming a more and more important process module. formation of shallow and/or ultra-shallow The junctions are formed by low energy implantation, which is normally followed by laser anneal treatment to activate implanted impurity with tess re- distribution. A laser anneal machine was constructed to study laser anneal of shallow and ultra-shallow junctions. Based on the data from experiments, a process model specifically for laser anneal of shallow junctions was analyzed and established to precisely control the process for various wafer conditions.

关 键 词：激光退火 工艺模型 浅结 

分 类 号：TN305.99[电子电信—物理电子学]