毫米波AlGaN/GaN HEMT交流特性研究  

Study of the AC Characteristics of Millimeter-Wave AlGaN / GaN HEMT

作　　者：程知群[1] 靳立伟[1] 冯志红[2] 

机构地区：[1]杭州电子科技大学射频电路与系统教育部重点实验室,杭州310018 [2]河北半导体研究所专用集成电路国家重点实验室,石家庄050051

出　　处：《微波学报》2012年第6期12-15,共4页Journal of Microwaves

基　　金：浙江省自然科学基金资助项目(Z1110937)

摘　　要：毫米波频段已经成为AlGaN/GaN HEMT研究的一个发展趋势。利用器件仿真软件TCAD,对AlGaN/GaN HEMT交流特性进行了研究。从势垒层的Al组分和厚度两个参数分析了器件特征频率变化趋势。用TCAD仿真得到的AlGaN/GaN HEMT器件本征S参数,在ADS中添加器件的非本征参数,得到器件仿真的频率特性。在器件设计的基础上,进行了器件版图设计和流片,并测量了器件频率特性。测试和仿真结果的对比表明两者较为一致,表明器件仿真的有效性和指导意义。The millimeter-wave band has become a developing trend in the study of AlGaN/GaN HEMT. The AC characteristics of AlGaN/GaN are researched by using TCAD software for deviee simulation. The effects of Al composite and thickness of barrier layer on frequency characteristics are analyzed. The frequency characteristics of device are simulated based on intrinsic S parameters of AlGaN/GaN HEMT from TCAD software and extrinsic parameters of device from ADS software. Layout design and fabrication of the devices are finished based on devices simulation, and then the frequency characteristics of the device are measured. The comparison between measured results and simulated results shows that both of results are close. It means that device simulations are of guiding significance and also valid.

关 键 词：势垒层 ALGAN GAN高电子迁移率晶体管 频率特性 

分 类 号：TN386[电子电信—物理电子学]