量子点激光器及其应用研究  

Study of Quantum Dot Lasers and Their Application

作　　者：梁基本[1] 徐波 龚谦[1] 韩勤[1] 周伟[1] 姜卫红[1] 刘会云[1] 王占国[1] 

机构地区：[1]中国科学院半导体研究所半导体材料科学实验室,北京100083

出　　处：《高技术通讯》2000年第4期91-93,共3页Chinese High Technology Letters

基　　金：国家自然科学基金!(69576026);863计划!(7150140010)资助项目

摘　　要：报道了用分于束外延生长出自组装垂直耦合InAs/GaAs大功率量子点激光器(QDLaser)材料和器件。对腔长为 80 0 μm ,室温下和 77K下连续激射阈值电流密度分别为 2 18A/cm2 和 4 9A/cm2 ,波长为 96 0nm ,最大输出功率大于lW。首次报道在0 54W工作下 ,寿命超过 30 0 0小时 ,功率仅下降 0 4 9db ,并制备出实用化的大功率量子点激光器激光耦合模块 ,室温连续激射功率超过High power lasers based on selforganized vertically coupled InAs/GaAs quantum dot lasers grown by Molecular Beam Epitaxy on GaAs(001) substrate is reported. The threshold current density is 218A/cm 2 and 49A/cm 2 for a 800μm long cavity with wavelength of 960nm at room temperature and 77K respectively. Maximal output power is higher than 1 W at room temperature (RT). The degradation rate of power is only 0.49 db corresponding to a lifetime of 3000 hours at P out =540mW for broad area contact LD. To our knowledge, it is the first time such a value reported.

关 键 词：激光器 量子点 分子束外延 

分 类 号：TN248[电子电信—物理电子学]