衬底温度对MOCVD-ZnO薄膜特性的影响  

Influence of Substrate Temperature on the Properties of ZnO Thin Films Grown by MOCVD Technique

作　　者：孙小虎[1] 雷青松[1] 曾祥斌[1] 薛俊明 鞠洪超 陈阳洋[1] 

机构地区：[1]华中科技大学电子科学与技术系,武汉430074 [2]河北汉盛光电科技有限公司,衡水053000

出　　处：《人工晶体学报》2012年第6期1494-1497,共4页Journal of Synthetic Crystals

摘　　要：利用金属有机物化学气相沉积(MOCVD)生长技术,制备本征ZnO薄膜,并研究薄膜的结构、形貌及光电等性能。结果表明:衬底温度对ZnO薄膜的微观结构、电学、光学及表面形貌等有显著影响。在衬底温度为180℃时获得电阻率为2.17×10-2Ω.cm。平均透过率为85%的低电阻、高透过率、结晶质量高、表面呈绒面结构的本征ZnO薄膜。对本征ZnO薄膜进一步掺杂和结构优化有望用于硅薄膜太阳能电池的前电极。Microstructural,electrical and optical properties of updoped-ZnO films grown by metal organic chemical vapor deposition at different substrate temperature were investigated.The results indicated that the substrate temperature plays an very important role on the properties of ZnO films.Textured ZnO thin film with a low resistivity（2.17×10-2 Ω · cm） and a high average transparency（85%） was obtained at the temperature of 180 ℃.By further optimizing the structure and B-doped ZnO film as front electrode will be applied in solar cell soon.

关 键 词：MOCVD 绒面ZnO薄膜 衬底温度 太阳电池 

分 类 号：O484[理学—固体物理]