GaAs:Cr中的Cr^(4+)(3d^2 )态的光激发电子顺磁共振研究  

Photo-EPR-Study of Cr^(4+)(3d^2) State in GaAs:Cr

作　　者：毛晋昌[1] 傅济时[1] 吴恩[1] 秦国刚[1] 王永鸿[2] 马碧春[2] 

机构地区：[1]北京大学物理系,北京100871 [2]北京有色金属研究总院,北京100088

出　　处：《Journal of Semiconductors》1991年第2期125-128,共4页半导体学报（英文版）

摘　　要：本文报道GaAs∶Cr中Cr^(4+)(3d^2)态的光激发电子顺磁共振(EPR)研究结果.实验表明,Cr_(4+)的EPR信号强度对温度关系在20-30K间达极大值.中子辐照能抑制Cr^(4+)的EPR信号,但对Cr^(2+)的EPR信号基本无影响.实验首次发现Cr^(4+)EPR信号在光照停止后先陡然增大然后逐渐下降,而不是光照停止后随即单调下降的现象.The photo-EPR Study of Cr^(4+) in Semi-insulated GaAs:Cr is reported.Theexperimental results show that there is a maximum of the Cr^(4+) EPR signal amplirude as a function of temperature in the temperature range 20-30K.It is disco-vered for the first time that after turning off the white light the Cr^(4+) EPR signalincreased before coming to decay.The neutron irradiation can restrain the Cr^(4+)EPR signal, but almost has no influence on the Cr^(2+) signal.

关 键 词：砷化镓 深能级 电子 顺磁共振 

分 类 号：TN304.23[电子电信—物理电子学]