LP-MOVPE Ga_(1-x)In_xAs/InP量子阱结构材料  

Ga_(1-x)In_xAs/InP Quantum Well Structure Grown by Low Pressure MOVPE

作　　者：段树坤[1] 熊飞克[1] 李学斌[1] 李晶[1] 王玉田[1] 江德生[1] 徐俊英[1] 万寿科[1] 钱家骏[1] 

机构地区：[1]中国科学院半导体研究所,北京100083

出　　处：《Journal of Semiconductors》1991年第9期578-582,共5页半导体学报（英文版）

摘　　要：本文报道用低压金属有机化合物汽相外延(LP-MOVPE) 的方法生长了晶格匹配的Ga_(1-x)In_4As/InP 量子阱结构材料.X光双晶衍射和透射电子显微镜测量表明多量子阱结构的周期性和界面质量较好、光致发光和光吸收谱的测量都观测到因量子尺寸效应导致的带间跃迁向高能方向的移动.Lattice-matched Ga_(1-x)In_xAs/InP quantum well structures were grown by low pressuremetalorganic vapor phase epitaxy (LP-MOVPE). Periodicity of the multi quantum well struc-tures and high quality of interfaces have been shown by X-ray double crystal diffraction andtransmission electron microscopy measurements. The shifts of the PL peaks to higher energiesinduced by quantum-size effect are observed. An exciton absorption peak is resolved ia 10Kabsorption spectrum.

关 键 词：GnInAs/InP 量子阱材料 外延生长 

分 类 号：TN304.26[电子电信—物理电子学]