S波段100W硅脉冲功率晶体管  

S-band 100 W Silicon Pulsed Power Transistor

作　　者：傅义珠[1] 李相光[1] 张树丹[1] 王佃利[1] 王因生[1] 康小虎[1] 姚长军 

机构地区：[1]南京电子器件研究所,210016

出　　处：《固体电子学研究与进展》2000年第2期123-127,共5页Research & Progress of SSE

摘　　要：报道了一种高增益高效率 S波段硅脉冲功率晶体管的研制结果。该器件在 f=2 .4～ 2 .6GHz,D=1 0 % ,τp=1 0 0 μs,Vc=36V条件下输出功率 1 0 0 W、增益 9d B、效率 50 %。在 f=2 .6GHz短脉宽条件下输出功率 1 60 W、增益 8.0 d B、效率 60 %。This paper presents the manufacturing result of a S-band silicon pulsed power transistor with high G p and high η c. This transistor produces 100 Watts of output power with 9 dB of gain and 50% of collector efficiency in the operation conditions of f =2.4～2.6 GHz, D =10%, τ p=100 μs and V c=36 V and 160 Watts of output power with 8.0 dB of gain and 60% collector efficiency at f =2.6 GHz for short pulsed operation.

关 键 词：硅 微波功率晶体管 S波段 

分 类 号：TN323.4[电子电信—物理电子学]