GaAsMMIC双栅MESFET混频器设计与实验研究  

Design and Experimental Study for GaAs Dual-gate MESFET Mixer MMIC

作　　者：孙晓玮 程知群[1] 夏冠群[1] 李洪芹[1] 翁建华[1] 

机构地区：[1]中国科学院上海冶金研究所,200050

出　　处：《固体电子学研究与进展》2000年第2期128-134,共7页Research & Progress of SSE

基　　金：中国科学院重点项目资助

摘　　要：对微波单片集成 (简称 MMIC)双栅 MESFET混频器的设计理论和工艺技术进行较为细致的研究。根据双栅 MESFET的理论分析与实验结果 ,建立了一种栅压调制 I- V特性的经验模型 ,推导了双栅 FET混频器变频增益公式。分析了栅压对改变非线性跨导在混频器中的作用。最后设计并加工出了芯片面积为 0 .75 mm× 1 .5 mm Ga As MMIC双栅 FET混频器。The design method and process technology for GaAs dual gate MESFET mixer MMIC are presented in detail. According to theory and experimental results of the dual gate FET, an empirical gate voltage controlled I V model is found, and the dual gate mixer MMIC conversion gain is derived. It is showed that the varying gate voltage will change the nonlinear transconductance to get mixer function. Finally, the GaAs dual gate FET mixer MMIC is designed and fabricated on 0.75 mm×1.5 mm chip.

关 键 词：砷化镓 微波单片集成电路 场效应晶体管 混频器 

分 类 号：TN773[电子电信—电路与系统]